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BLF183XRS - Power LDMOS transistor

This page provides the datasheet information for the BLF183XRS, a member of the BLF183XR Power LDMOS transistor family.

Datasheet Summary

Description

A 350 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.

Table 1.

Features

  • Easy power control.
  • Integrated ESD protection.
  • Excellent ruggedness.
  • High efficiency.
  • Excellent thermal stability.
  • Designed for broadband operation (HF to 600 MHz).
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

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Datasheet preview – BLF183XRS

Datasheet Details

Part number BLF183XRS
Manufacturer NXP
File Size 160.72 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF183XRS Datasheet
Additional preview pages of the BLF183XRS datasheet.

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Full PDF Text Transcription

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BLF183XR; BLF183XRS Power LDMOS transistor Rev. 2 — 22 May 2015 Product data sheet 1. Product profile 1.1 General description A 350 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Table 1. Application information Test signal f (MHz) pulsed RF 108 CW 88 to 108 pulsed RF 30 to 512 CW 30 to 512 VDS (V) 50 50 50 35 PL (W) 350 388 400 193 Gp (dB) 28 26 15 14 D (%) 75 80 48 47 1.2 Features and benefits  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (HF to 600 MHz)  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.
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