BLF184XR
description
A 700 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.
Table 1. Application information
Test signal f
(MHz) pulsed RF
CW 108
(V) (W)
50 700
50 750
Gp (d B) 23.9 23.5
D (%) 73.5 81.9
1.2 Features and benefits
- Easy power control
- Integrated ESD protection
- Excellent ruggedness
- High efficiency
- Excellent thermal stability
- Designed for broadband operation (HF to 600 MHz)
- pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(Ro HS)
1.3 Applications
- Industrial, scientific and medical applications
- Broadcast transmitter applications
NXP Semiconductors
BLF184XR; BLF184XRS
Power LDMOS transistor
2. Pinning information
Table 2. Pinning Pin Description
BLF184XR (SOT1214A) 1 drain1 2 drain2 3 gate1 4 gate2 5 source
BLF184XRS (SOT1214B) 1 drain1 2 drain2 3 gate1 4 gate2 5 source
[1] Connected to flange.
3. Ordering information
Simplified outline Graphic...
