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BLF184XRS - Power LDMOS transistor

Download the BLF184XRS datasheet PDF. This datasheet also covers the BLF184XR variant, as both devices belong to the same power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

A 700 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.

Table 1.

Key Features

  • Easy power control.
  • Integrated ESD protection.
  • Excellent ruggedness.
  • High efficiency.
  • Excellent thermal stability.
  • Designed for broadband operation (HF to 600 MHz).
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BLF184XR-NXP.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BLF184XR; BLF184XRS Power LDMOS transistor Rev. 3 — 1 April 2014 Product data sheet 1. Product profile 1.1 General description A 700 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Table 1. Application information Test signal f (MHz) pulsed RF 108 CW 108 VDS PL (V) (W) 50 700 50 750 Gp (dB) 23.9 23.5 D (%) 73.5 81.9 1.2 Features and benefits  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (HF to 600 MHz)  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.