BLF247B Description
Silicon N-channel enhancement mode vertical D-MOS push-pull transistor encapsulated in a 4-lead, SOT262A1 balanced flange type package with two ceramic caps. The mounting flange provides the mon source connection for the transistor. 5 3 Top view BLF247B 1 2 d g s g 5 4 MAM098 d CAUTION The device is supplied in a antistatic package.
BLF247B Key Features
- High power gain
- Easy power control
- Good thermal stability
- Withstands full load mismatch