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BLF247B - VHF push-pull power MOS transistor

Description

Silicon N-channel enhancement mode vertical D-MOS push-pull transistor encapsulated in a 4-lead, SOT262A1 balanced flange type package with two ceramic caps.

The mounting flange provides the common source connection for the transistor.

Features

  • High power gain.
  • Easy power control.
  • Good thermal stability.
  • Withstands full load mismatch.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET BLF247B VHF push-pull power MOS transistor Product specification August 1994 Philips Semiconductors Philips Semiconductors Product specification VHF push-pull power MOS transistor FEATURES • High power gain • Easy power control • Good thermal stability • Withstands full load mismatch. APPLICATIONS • Large signal applications in the VHF frequency range. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS push-pull transistor encapsulated in a 4-lead, SOT262A1 balanced flange type package with two ceramic caps. The mounting flange provides the common source connection for the transistor. PINNING - SOT262A1 PIN 1 2 3 4 5 DESCRIPTION drain 1 drain 2 gate 1 gate 2 source Fig.1 Simplified outline and symbol.
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