BLV20 Datasheet | NXP Semiconductors

DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. It has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange. PINNING - SOT123 PIN 1 2 3 4 DESCRIPTION collector emitter base emitter 2 3 MSB057 MBB012 QUICK REFERENCE DATA R.F. performance up to Th = 25 °C in an unneutralized mon-emitter class-B circuit MODE OF OPERATION c.w. VCE V 28 f MHz 175 PL W 8 Gp d B > 12 η % > 65 zi Ω 1,8 + j0,7 YL m S 18 - j20 PIN CONFIGURATION halfpage 4 c handbook, halfpage b e Fig.1 Simplified outline and symbol. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the Be O disc is not damaged. August 1986 Philips Semiconductors Product specification VHF power transistor RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0) peak value Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current (average) Collector current (peak value); f > 1 MHz R.F. power dissipation (f > 1 MHz); Tmb = 25 °C Storage temperature Operating junction temperature v CESM VCEO VEBO IC(AV) ICM Prf Tstg Tj max. max. max. max. max. max. max. 65 V 36 V 4 V 0,9 A 2,5 A 20 W 200 °C - 65 to + 150 °C MGP272 handbook, halfpage 1 handbook, halfpage MGP273 Ptot IC (A) 20 Th = 70 °C Tmb = 25 °C (W) ΙΙΙ derate by 0.12 W/K ΙΙ 0.1 W/K Ι 0 10 0 20 30 VCE (V) 40 0 50 Th (°C) 100 I Continuous d.c. operation II Continuous r.f. operation III Short-time operation during mismatch Fig.2 D.C. SOAR. Fig.3 R.F. power dissipation; VCE ≤ 28 V; f > 1 MHz. THERMAL RESISTANCE (dissipation = 8 W; Tmb = 72,4 °C, i.e. Th = 70 °C) From junction to mounting base (d.c....