BLV2046 Datasheet | NXP Semiconductors

FEATURES - Emitter ballasting resistors for optimum temperature profile - Gold metallization ensures excellent reliability - Internal input and output matching to achieve high power gain and collector efficiency for an easy design of wideband circuits. APPLICATIONS - mon emitter class-AB operation in PCN and PCS applications in the 1800 to 1990 MHz frequency range. PINNING - SOT460A PIN 1 2 3 SYMBOL c b e base emitter, connected to flange DESCRIPTION collector handbook, halfpage 3 Top view MBK093 DESCRIPTION NPN silicon planar transistor in a 2-lead SOT460A flange package with a ceramic cap. The emitter is connected to the flange. QUICK REFERENCE DATA RF performance at Th = 25 °C in a mon emitter test circuit MODE OF OPERATION CW, class-AB 2-tone, class-AB f (MHz) 1 990 f1 = 1990.0; f2 = 1990.1 VCE (V) 26 26 PL (W) 50 50 (PEP) Fig.1 Simplified outline. Gp (d B) ≥7.5 typ. 8 ηC (%) ≥40 typ. 33 dim (d Bc) - typ. - 30 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the Be O disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1997 Aug 22 Philips Semiconductors Product specification UHF power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC IC(AV) Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) average collector current total power dissipation storage temperature operating junction temperature Tmb = 25 °C open emitter open base open collector CONDITIONS MIN. MAX. UNIT - - - - - - - 65 - 60 27 2.5 12 12 195 +150 200 V V V A A W °C °C THERMAL...