BLV2042 Datasheet | NXP Semiconductors

FEATURES - Emitter ballasting resistors for optimum temperature profile - Gold metallization ensures excellent reliability - Internal input matching to achieve high power gain and easy design of wideband circuits. APPLICATIONS - mon emitter class-AB operation in base stations in the 1800 to 1990 MHz frequency range. DESCRIPTION NPN silicon planar epitaxial power transistor in an 8-lead SOT409A SMD package with ceramic cap. All leads are isolated from the mounting base. 1 Top view 4 MSA467 PINNING - SOT409A PIN 1, 4, 5 and 8 2 and 3 6 and 7 emitter base collector DESCRIPTION 8 handbook, halfpage 5 c b e Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance at Tmb = 25 °C in a mon emitter test circuit. MODE OF OPERATION CW, class-AB CW, class-AB 2-tone, class-AB f (MHz) 1950 1990 f1 = 1950; f2 = 1950.1 VCE (V) 26 26 26 PL (W) 4 4 4 (PEP) Gp (d B) ≥11 ≥11 typ. 14 ηC (%) ≥40 ≥40 typ. 35 dim (d Bc) - - typ. - 30 2000 May 08 Philips Semiconductors Product specification UHF power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC IC(AV) Ptot Tstg Tj Note PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) collector current (average) total power dissipation storage temperature operating junction temperature Tmb = 25 °C; note 1 open base open collector CONDITIONS open emitter - - - - - - - 65 - MIN. MAX. 60 28 4 1.2 1.2 14.6 +150 200 V V V A A UNIT W °C °C 1. Transistor with metallized ground plane mounted on a printed-circuit board, see “Mounting and soldering remendations in the General part of the associated handbook”. handbook, halfpage MGU192 handbook, halfpage MGU193 IC (A) Ptot (W) 12...