BLV2045N Datasheet | NXP Semiconductors

FEATURES - Emitter ballasting resistors for optimum temperature profile - Gold metallization ensures excellent reliability - Internal input and output matching for an easy design of wideband circuits. APPLICATIONS - mon emitter class-AB operation in PCN and PCS applications in the 1800 to 2000 MHz frequency range. DESCRIPTION PINNING - SOT390A PIN 1 2 3 SYMBOL c b e base emitter, connected to flange DESCRIPTION collector handbook, halfpage NPN silicon planar UHF power transistor in a 2-lead SOT390A flange package with a ceramic cap. The emitter is connected to the flange. Top view MSA470 Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Th = 25 °C in a mon emitter test circuit. MODE OF OPERATION CW, class-AB 2-tone, class-AB f (MHz) 1990 f1 = 1990.0; f2 = 1990.1 VCE (V) 26 26 PL (W) 35 35 (PEP) Gp (d B) typ. 9.5 ≥9.5 ηC (%) typ. 43 ≥33 dim (d Bc) - ≤- 30 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC IC(AV) Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) average collector current total power dissipation storage temperature operating junction temperature Tmb = 25 °C CONDITIONS open emitter open base open collector - - - - - - - 65 - WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the Be O disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 2000 Feb 21 2 MIN. MAX. 65 27 3 4 4 125 +150 200 UNIT V V V A A W °C °C Philips Semiconductors Preliminary specification UHF power transistor THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h PARAMETER...