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BLV2045N - UHF power transistor

General Description

NPN silicon planar UHF power transistor in a 2-lead SOT390A flange package with a ceramic cap.

The emitter is connected to the flange.

Key Features

  • Emitter ballasting resistors for optimum temperature profile.
  • Gold metallization ensures excellent reliability.
  • Internal input and output matching for an easy design of wideband circuits.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET M3D171 BLV2045N UHF power transistor Preliminary specification Supersedes data of 1999 May 01 2000 Feb 21 Philips Semiconductors Preliminary specification UHF power transistor FEATURES • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal input and output matching for an easy design of wideband circuits. APPLICATIONS • Common emitter class-AB operation in PCN and PCS applications in the 1800 to 2000 MHz frequency range. DESCRIPTION 2 BLV2045N PINNING - SOT390A PIN 1 2 3 SYMBOL c b e base emitter, connected to flange DESCRIPTION collector handbook, halfpage 1 3 NPN silicon planar UHF power transistor in a 2-lead SOT390A flange package with a ceramic cap.