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BLV2044 - UHF power transistor

General Description

DESCRIPTION NPN silicon planar transistor in a 2-lead SOT437A flange package with a ceramic cap.

The emitter is connected to the flange.

Fig.1 SOT437A.

Key Features

  • Emitter ballasting resistors for optimum temperature profile.
  • Gold metallization ensures excellent reliability.
  • Internal input and output matching to achieve high power gain and collector efficiency for an easy design of wideband circuits.

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Full PDF Text Transcription (Reference)

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DISCRETE SEMICONDUCTORS DATA SHEET BLV2044 UHF power transistor Product specification Supersedes data of 1996 Feb 09 1996 Nov 14 Philips Semiconductors Product specification UHF power transistor FEATURES • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal input and output matching to achieve high power gain and collector efficiency for an easy design of wideband circuits. APPLICATIONS • Common emitter class-AB operation in base station transmitters in the 1800 to 2000 MHz frequency range.