BLV2047 Datasheet | NXP Semiconductors

FEATURES - Emitter ballasting resistors for optimum temperature profile - Gold metallization ensures excellent reliability - Internal input and output matching for easy design of wideband circuits - Al N substrate package for environmental safety. APPLICATIONS handbook, halfpage PINNING - SOT468A PIN 1 2 3 collector base emitter; connected to flange DESCRIPTION - mon emitter class-AB operation for PCN (Personal munication Networks) and PCS (Personal munication Services) base station applications in the 1800 to 2000 MHz frequency range. Top view 3 2 MBK200 DESCRIPTION NPN silicon planar power transistor in a 2-lead SOT468A flange package with ceramic cap. The emitter is connected to the flange. QUICK REFERENCE DATA RF performance at Th = 25 °C in a mon emitter test circuit. MODE OF OPERATION CW, class-AB 2-tone, class-AB f (MHz) 2000 f1 = 2000.0; f2 = 2000.1 VCE (V) 26 26 PL (W) 60 60 (PEP) Gp (d B) ≥8.5 ≥9 ηC (%) ≥40 ≥33 dim (d Bc) - ≤- 30 Fig.1 Simplified outline. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature operating junction temperature Tmb = 25 °C CONDITIONS open emitter open base open collector MIN. - - - - - - 65 - MAX. 65 27 3 10 270 +150 200 UNIT V V V A W °C °C 1999 Jun 09 Philips Semiconductors Product specification UHF power transistor THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h Note 1. Thermal resistance is determined under specified RF operating conditions. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICES h FE Cc Cre Note 1. Capacitance of die only. PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector leakage current DC current gain collector capacitance feedback capacitance CONDITIONS open emitter; IC =...