Datasheet Summary
DISCRETE SEMICONDUCTORS
DATA SHEET
BSH301 Dual N-channel enhancement mode MOS transistor
Objective specification 1999 Apr 06
Philips Semiconductors
Objective specification
Dual N-channel enhancement mode MOS transistor
Features
- 40 mΩ on-state resistance at 2.5 V gate drive
- RDSon rating down to 1.8 V
- ESD gate protection. APPLICATIONS
- Li-Ion safety switch
- Power management. DESCRIPTION Two N-channel enhancement mode MOS transistors in an 8-pin plastic TSSOP8 package. PINNING SOT530 (TSSOP8) PIN 1 2 3 4 5 6 7 8 SYMBOL d1 s1 s1 g1 g2 s2 s2 d1 DESCRIPTION drain 1 source 1 source 1 gate 1 gate 2 source 2 source 2 drain 1
1 4
MAM423
8 handbook, halfpage
5 d1 s2 s2 g2 d1...