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BSH301 - Dual N-channel enhancement mode MOS transistor

Datasheet Summary

Description

Two N-channel enhancement mode MOS transistors in an 8-pin plastic TSSOP8 package.

Features

  • 40 mΩ on-state resistance at 2.5 V gate drive.
  • RDSon rating down to 1.8 V.
  • ESD gate protection.

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Datasheet Details

Part number BSH301
Manufacturer NXP
File Size 36.18 KB
Description Dual N-channel enhancement mode MOS transistor
Datasheet download datasheet BSH301 Datasheet
Additional preview pages of the BSH301 datasheet.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET BSH301 Dual N-channel enhancement mode MOS transistor Objective specification 1999 Apr 06 Philips Semiconductors Objective specification Dual N-channel enhancement mode MOS transistor FEATURES • 40 mΩ on-state resistance at 2.5 V gate drive • RDSon rating down to 1.8 V • ESD gate protection. APPLICATIONS • Li-Ion safety switch • Power management. DESCRIPTION Two N-channel enhancement mode MOS transistors in an 8-pin plastic TSSOP8 package. PINNING SOT530 (TSSOP8) PIN 1 2 3 4 5 6 7 8 SYMBOL d1 s1 s1 g1 g2 s2 s2 d1 DESCRIPTION drain 1 source 1 source 1 gate 1 gate 2 source 2 source 2 drain 1 1 4 MAM423 BSH301 8 handbook, halfpage 5 d1 s2 s2 g2 d1 s1 s1 g1 Fig.1 Simplified outline (SOT530) and symbol.
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