BSP090 - P-channel enhancement mode vertical D-MOS transistor

NXP Semiconductors

General Description

DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a 4-pin plastic SOT223 SMD package.

CAUTION The device is supplied in an antistatic package.

The gate-source input must be protected against static discharge during transport or handling.

Key Features

High speed switching.
No secondary breakdown.
Very low on-state resistance.

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BSP090 p-channel enhancement mode vertical d-mos transistor by NXP Semiconductors - Datasheet Preview

Datasheet Details

Part number	BSP090
Manufacturer	NXP Semiconductors
File Size	124.07 KB
Description	P-channel enhancement mode vertical D-MOS transistor
Datasheet	BSP090 Datasheet

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Full PDF Text Transcription (Reference)

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DISCRETE SEMICONDUCTORS DATA SHEET BSP090 P-channel enhancement mode vertical D-MOS transistor Product speciﬁcation Supersedes data of 1997 Jan 20 File under Discrete Semiconductors, SC07 1997 Mar 13 Philips Semiconductors Product speciﬁcation P-channel enhancement mode vertical D-MOS transistor FEATURES • High speed switching • No secondary breakdown • Very low on-state resistance. APPLICATIONS • Motor and actuator drivers • Power management • Synchronized rectification. handbook, halfpage BSP090 PINNING - SOT223 PIN 1 2 3 4 SYMBOL g d s d gate drain source drain DESCRIPTION 4 d DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a 4-pin plastic SOT223 SMD package. g CAUTION The device is supplied in an antistatic package.