Datasheet Details
| Part number | BSP152 |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 106.76 KB |
| Description | N-channel enhancement mode vertical D-MOS transistor |
| Datasheet | BSP152_PhilipsSemiconductors.pdf |
|
|
Overview: DISCRETE SEMICONDUCTORS DATA SHEET BSP152 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification.
| Part number | BSP152 |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 106.76 KB |
| Description | N-channel enhancement mode vertical D-MOS transistor |
| Datasheet | BSP152_PhilipsSemiconductors.pdf |
|
|
|
N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers.
PINNING - SOT223 PIN 1 2 3 4 DESCRIPTION handbook, halfpage BSP152 QUICK REFERENCE DATA SYMBOL VDS ID Ptot ±VGSO RDS(on) VGS(off) PARAMETER drain-source voltage DC drain current total power dissipation gate-source voltage drain-source on-resistance gate-source cut-off voltage CONDITIONS MIN.
− − up to Tamb = 25 °C − open drain ID = 750 mA;
| Part Number | Description |
|---|---|
| BSP100 | N-channel enhancement mode TrenchMOS transistor |
| BSP100 | N-channel enhancement mode TrenchMOS transistor |
| BSP106 | N-channel enhancement mode vertical D-MOS transistor |
| BSP107 | N-channel enhancement mode vertical D-MOS transistor |
| BSP108 | N-channel enhancement mode vertical D-MOS transistor |
| BSP110 | N-channel enhancement mode vertical D-MOS transistor |
| BSP120 | N-channel enhancement mode vertical D-MOS transistor |
| BSP121 | N-channel enhancement mode vertical D-MOS transistor |
| BSP122 | N-channel enhancement mode vertical D-MOS transistor |
| BSP126 | N-channel enhancement mode vertical D-MOS transistor |