LTE21015R - NPN microwave power transistor

Product Overview

NXP

LTE21015R NPN microwave power transistor by NXP - Datasheet Preview — Datasheet preview – LTE21015R

Datasheet Details

Part number	LTE21015R
Manufacturer	NXP
File Size	71.65 KB
Description	NPN microwave power transistor
Datasheet	LTE21015R Datasheet
Additional preview pages of the LTE21015R datasheet.

LTE21015R Product details

Description

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange.

Fig.1 Simplified outline and symbol.

Features

Interdigitated structure provides high emitter efficiency.
Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR.
Gold metallization realizes very stable characteristics and excellent lifetime.
Multicell geometry gives good balance of dissipated power and low thermal resistance.
Input matching cell allows an easier design of circuits.

📁 Similar Datasheet

LTE283QV-F01 - TFT LCD (Samsung)
LTE-1650 - Property of Lite-On Only (Lite-On Technology)
LTE-1653K - Property of Lite-On Only (Lite-On Technology)
LTE-209 - Property of Lite-On Only (Lite-On Technology)
LTE-239 - Property of Lite-On Only (Lite-On Technology)
LTE-2871 - Gaalas T-1 3/4 Modified Infrared Emitting Diode (Lite-On Technology)
LTE-2872U - IR Emitter and Detector (LITEON)
LTE-302 - IR Emitter/Detector (Lite-On Technology)
LTE-304 - Property of Lite-On Only (Lite-On Technology)
LTE-306 - Property of Lite-On Only (Lite-On Technology)

Other Datasheets by NXP

LTE21009R - NPN microwave power transistor
LTE21025R - NPN microwave power transistor
LTE42005S - NPN microwave power transistor
LTE42008R - NPN microwave power transistor
LTE42012R - NPN microwave power transistor

Published: Mar 27, 2005 |