LTE21015R Description
1 c b e MAM131 DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange. 436 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a mon emitter class-A amplifier.
LTE21015R Key Features
- Interdigitated structure provides high emitter efficiency
- Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR
- Gold metallization realizes very stable characteristics and excellent lifetime
- Multicell geometry gives good balance of dissipated power and low thermal resistance
- Input matching cell allows an easier design of circuits
LTE21015R Applications
- mon emitter class-A linear power amplifiers up to 2 GHz
- SOT440A PIN 1 2 3 collector base emitter connected to flange DESCRIPTION
- toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or di