Datasheet4U Logo Datasheet4U.com

LTE21015R - NPN microwave power transistor

General Description

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange.

Fig.1 Simplified outline and symbol.

Key Features

  • Interdigitated structure provides high emitter efficiency.
  • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR.
  • Gold metallization realizes very stable characteristics and excellent lifetime.
  • Multicell geometry gives good balance of dissipated power and low thermal resistance.
  • Input matching cell allows an easier design of circuits.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
LTE283QV-F01 TFT LCD Samsung
LTE-1650 Property of Lite-On Only Lite-On Technology
LTE-1653K Property of Lite-On Only Lite-On Technology
LTE-209 Property of Lite-On Only Lite-On Technology
LTE-239 Property of Lite-On Only Lite-On Technology

Other Datasheets by NXP Semiconductors

Part Number Description
LTE21009R NPN microwave power transistor
LTE21025R NPN microwave power transistor
LTE42005S NPN microwave power transistor
LTE42008R NPN microwave power transistor
LTE42012R NPN microwave power transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DISCRETE SEMICONDUCTORS DATA SHEET LTE21015R NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Interdigitated structure provides high emitter efficiency • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR • Gold metallization realizes very stable characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance • Input matching cell allows an easier design of circuits. APPLICATIONS • Common emitter class-A linear power amplifiers up to 2 GHz.