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LTE21015R Datasheet NPN Microwave Power Transistor

Manufacturer: NXP Semiconductors

Overview: DISCRETE SEMICONDUCTORS DATA SHEET LTE21015R NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product.

General Description

1 c b e MAM131 DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange.

Top view Marking code: 436 Fig.1 Simplified outline and symbol.

QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class-A amplifier.

Key Features

  • Interdigitated structure provides high emitter efficiency.
  • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR.
  • Gold metallization realizes very stable characteristics and excellent lifetime.
  • Multicell geometry gives good balance of dissipated power and low thermal resistance.
  • Input matching cell allows an easier design of circuits.

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LTE21015R Distributor