Datasheet4U Logo Datasheet4U.com

LTE42008R Datasheet NPN Microwave Power Transistor

Manufacturer: NXP Semiconductors

Overview: DISCRETE SEMICONDUCTORS DATA SHEET LTE42008R NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 24 Philips Semiconductors Product.

General Description

emitter connected to flange olumns 1 c b DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange.

2 Top view 3 MAM131 e Marking code: 196 Fig.1 Simplified outline and symbol.

QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class-A amplifier.

Key Features

  • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR.
  • Gold metallization realizes very stable characteristics and excellent lifetime.
  • Input matching cell improves input impedance and allows an easier design of circuits.

LTE42008R Distributor