LTE42008R - NPN microwave power transistor

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NXP

LTE42008R NPN microwave power transistor by NXP - Datasheet Preview — Datasheet preview – LTE42008R

Datasheet Details

Part number	LTE42008R
Manufacturer	NXP
File Size	78.20 KB
Description	NPN microwave power transistor
Datasheet	LTE42008R Datasheet
Additional preview pages of the LTE42008R datasheet.

Product details

Description

emitter connected to ﬂange olumns 1 c b DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange.2 Top view 3 MAM131 e Marking code: 196 Fig.1 Simplified outline and symbol.QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class-A ampliﬁer.MODE OF OPERATION Class-A (CW) linear f (GHz) 4.2 VCE (V) 16 IC (mA) 250 WARNING Product and environmental safety - toxic

Features

Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR.
Gold metallization realizes very stable characteristics and excellent lifetime.
Input matching cell improves input impedance and allows an easier design of circuits.

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Published: Mar 27, 2005 |