Description
NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange.
Features
- Interdigitated structure provides high emitter efficiency.
- Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR.
- Gold metallization realizes very stable characteristics and excellent lifetime.
- Multicell geometry gives good balance of dissipated power and low thermal resistance.
- Input matching cell improves input impedance and allows an easier design of wideband circuits.
LTE42012R Datasheet
