Datasheet4U Logo Datasheet4U.com

LTE42012R Datasheet NPN Microwave Power Transistor

Manufacturer: NXP Semiconductors

Overview: DISCRETE SEMICONDUCTORS DATA SHEET LTE42012R NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 21 Philips Semiconductors Product specification NPN microwave power.

General Description

NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange.

Marking code: 198 3 2 Top view olumns LTE42012R PINNING - SOT440A PIN 1 2 3 collector base emitter connected to flange DESCRIPTION 1 c b e MAM131 Fig.1 Simplified outline and symbol.

QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class-A selective amplifier.

Key Features

  • Interdigitated structure provides high emitter efficiency.
  • Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR.
  • Gold metallization realizes very stable characteristics and excellent lifetime.
  • Multicell geometry gives good balance of dissipated power and low thermal resistance.
  • Input matching cell improves input impedance and allows an easier design of wideband circuits.

More Datasheets from NXP Semiconductors

Part Number Description
LTE42005S NPN microwave power transistor
LTE42008R NPN microwave power transistor
LTE21009R NPN microwave power transistor
LTE21015R NPN microwave power transistor
LTE21025R NPN microwave power transistor

LTE42012R Distributor