NXP Semiconductors LTE42012R
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.| Part No. | LTE42012R |
|---|---|
| Datasheet | LTE42012R Download |
| Manufacturer |  NXP Semiconductors |
| Description | NPN microwave power transistor |
| Buy | Stock & Price |
FEATURES
● Interdigitated structure provides high emitter efficiency● Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR
● Gold metallization realizes very stable characteristics and excellent lifetime
● Multicell geometry gives good balance of dissipated power and low thermal resistance
● Input matching cell improves input impedance and allows an easier design of wideband circuits.
APPLICATIONS
● Common emitter class-A power amplifiers up to 4.2 GHz in CW conditions for military and professional applications.DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange. Marking code: 198 3 2 Top view olumns LTE42012R PINNING - SOT440A PIN 1 2 3 collector base emitter connected to flangeDESCRIPTION
1 c b e MAM131 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class-A selective amplifier.
