LTE42012R Description
NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange. QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a mon emitter class-A selective amplifier. MODE OF OPERATION Class-A (CW) f (GHz) 4.2 VCE (V) 16 IC (mA) 400 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide.
LTE42012R Key Features
- Interdigitated structure provides high emitter efficiency
- Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR
- Gold metallization realizes very stable characteristics and excellent lifetime
- Multicell geometry gives good balance of dissipated power and low thermal resistance
- Input matching cell improves input impedance and allows an easier design of wideband circuits