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LTE42005S Datasheet NPN Microwave Power Transistor

Manufacturer: NXP Semiconductors

Overview: DISCRETE SEMICONDUCTORS DATA SHEET LTE42005S NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 21 Philips Semiconductors Product specification NPN microwave power.

General Description

NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange.

2 Top view columns LTE42005S PINNING - SOT440A PIN 1 2 3 collector base emitter connected to flange DESCRIPTION 1 c b 3 MAM131 e Marking code: 502 Fig.1 Simplified outline and symbol.

QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class-A amplifier.

Key Features

  • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR.
  • Gold metallization realizes very stable characteristics and excellent lifetime.
  • Input matching cell improves input impedance and allows an easier design of circuits.

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