Datasheet4U Logo Datasheet4U.com

LTE42005S - NPN microwave power transistor

General Description

NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange.

Key Features

  • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR.
  • Gold metallization realizes very stable characteristics and excellent lifetime.
  • Input matching cell improves input impedance and allows an easier design of circuits.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
LTE4238 (LTE-x238x) LAMP LITE-ON Electronics
LTE4238C (LTE-x238x) LAMP LITE-ON Electronics
LTE4.5MB Ceramic Filter and Trap Chequers Electronic
LTE4.5MB CERAMIC FILTER ECS
LTE400WQ-F02 LCD DIVISION SamSung

Other Datasheets by NXP Semiconductors

Part Number Description
LTE42008R NPN microwave power transistor
LTE42012R NPN microwave power transistor
LTE21009R NPN microwave power transistor
LTE21015R NPN microwave power transistor
LTE21025R NPN microwave power transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DISCRETE SEMICONDUCTORS DATA SHEET LTE42005S NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 21 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR • Gold metallization realizes very stable characteristics and excellent lifetime • Input matching cell improves input impedance and allows an easier design of circuits APPLICATION • Common emitter class-A linear power amplifiers up to 4.2 GHz. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange.