LTE42005S Description
NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange. 2 Top view columns LTE42005S PINNING - SOT440A PIN 1 2 3 collector base emitter connected to flange DESCRIPTION 1 c b 3 MAM131 e Marking code: 502 Fig.1 Simplified outline and symbol.
LTE42005S Key Features
- Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR
- Gold metallization realizes very stable characteristics and excellent lifetime
- Input matching cell improves input impedance and allows an easier design of circuits APPLICATION
- mon emitter class-A linear power amplifiers up to 4.2 GHz. DESCRIPTION NPN silicon planar epitaxial microwave power tran
- SOT440A PIN 1 2 3 collector base emitter connected to flange DESCRIPTION
- toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not da