LTE21025R - NPN microwave power transistor

Product Overview

NXP

Part number	LTE21025R
Manufacturer	NXP
File Size	51.80 KB
Description	NPN microwave power transistor
Datasheet	LTE21025R Datasheet
Additional preview pages of the LTE21025R datasheet.

1 c APPLICATIONS

Common emitter class-A linear power amplifiers up to 4.2 GHz.

NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange.

Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR.
Self-aligned process entirely ion implanted.
Gold metallization realizes very stable characteristics and excellent lifetime.
Input matching cell improves input impedance and allows an easier design of wideband circuits. olumns LTE21025R.

LTE283QV-F01 - TFT LCD (Samsung)
LTE-1650 - Property of Lite-On Only (Lite-On Technology)
LTE-1653K - Property of Lite-On Only (Lite-On Technology)
LTE-209 - Property of Lite-On Only (Lite-On Technology)
LTE-239 - Property of Lite-On Only (Lite-On Technology)
LTE-2871 - Gaalas T-1 3/4 Modified Infrared Emitting Diode (Lite-On Technology)
LTE-2872U - IR Emitter and Detector (LITEON)
LTE-302 - IR Emitter/Detector (Lite-On Technology)
LTE-304 - Property of Lite-On Only (Lite-On Technology)
LTE-306 - Property of Lite-On Only (Lite-On Technology)

Other Datasheets by NXP

Published: Mar 27, 2005 |