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LTE21025R - NPN microwave power transistor

General Description

1 c APPLICATIONS

Common emitter class-A linear power amplifiers up to 4.2 GHz.

NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange.

Key Features

  • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR.
  • Self-aligned process entirely ion implanted.
  • Gold metallization realizes very stable characteristics and excellent lifetime.
  • Input matching cell improves input impedance and allows an easier design of wideband circuits. olumns LTE21025R.

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Full PDF Text Transcription (Reference)

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DISCRETE SEMICONDUCTORS DATA SHEET LTE21025R NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 21 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR • Self-aligned process entirely ion implanted • Gold metallization realizes very stable characteristics and excellent lifetime • Input matching cell improves input impedance and allows an easier design of wideband circuits. olumns LTE21025R PINNING - SOT440A PIN 1 2 3 collector base emitter connected to flange DESCRIPTION 1 c APPLICATIONS • Common emitter class-A linear power amplifiers up to 4.2 GHz.