LTE21025R Description
1 c APPLICATIONS mon emitter class-A linear power amplifiers up to 4.2 GHz. 3 b DESCRIPTION 2 MAM131 e NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange. 439 Fig.1 Simplified outline and symbol.
LTE21025R Key Features
- Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR
- Self-aligned process entirely ion implanted
- Gold metallization realizes very stable characteristics and excellent lifetime
- Input matching cell improves input impedance and allows an easier design of wideband circuits
- SOT440A PIN 1 2 3 collector base emitter connected to flange DESCRIPTION
LTE21025R Applications
- mon emitter class-A linear power amplifiers up to 4.2 GHz
- toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or di