PHD95N03LT
PHD95N03LT is N-channel enhancement mode field-effect transistor manufactured by NXP Semiconductors.
N-channel enhancement mode field-effect transistor
Rev. 01
- 18 July 2001 Product data
M3D300
1. Description
N-channel logic level field-effect power transistor in a plastic package using Trench MOS™1 technology. Product availability: PHD95N03LT in SOT428 (D-PAK).
2. Features s Low on-state resistance s Fast switching.
3. Applications s High frequency puter motherboard DC to DC converters
4. Pinning information c
Table 1: Pin 1 2 3 mb
Pinning
- SOT428, simplified outline and symbol c
Description gate (g)
Simplified outline mb
Symbol d drain (d) source (s) mounting base, connected to drain (d)
[1] g s
MBB076
2 1 Top view 3
MBK091
SOT428 (D-Pak)
[1] It is not possible to make connection to pin 2 of the SOT428 package.
1.
Trench MOS is a trademark of Royal Philips Electronics.
Philips Semiconductors
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tj = 25 to 175 °C Tmb = 25 °C; VGS = 5 V Tmb = 25 °C VGS = 10 V; ID = 25 A VGS = 5 V; ID = 25 A Typ
- -
- - 5 7.5 Max 25 75 115 175 7 9 Unit V A W °C mΩ mΩ drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter
6. Limiting...
