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PHD97NQ03LT - N-channel TrenchMOS logic level FET

General Description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Key Features

  • Fast switching.
  • Lead-free packing.
  • Logic level threshold.
  • Low on-state resistance.
  • Suitable for high frequency.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PHD97NQ03LT N-channel TrenchMOS logic level FET Rev. 01 — 24 March 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits „ Fast switching „ Lead-free packing „ Logic level threshold „ Low on-state resistance „ Suitable for high frequency applications due to fast switching characteristics 1.3 Applications „ Computer motherboard high frequency DC-to-DC convertors „ Switched-mode power supplies „ Voltage regulators 1.4 Quick reference data Table 1.