PHD98N03LT Datasheet | NXP Semiconductors

N-channel Trench MOS logic level FET Rev. 05 - 1 December 2006 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS technology. 1.2 Features I Low on-state resistance I Fast switching 1.3 Applications I puter motherboard high-frequency DC-to-DC converters 1.4 Quick reference data I VDS ≤ 25 V I RDSon ≤ 5.9 mΩ I ID ≤ 75 A I QGD = 15 n C (typ) 2. Pinning information Table 1. Pinning Pin Description 1 gate (G) 2 drain (D) 3 source (S) mb mounting base; connected to drain (D) Simplified outline [1] mb [1] It is not possible to make a connection to pin 2. 2 13 SOT428 (DPAK) Symbol G mbb076 S NXP Semiconductors N-channel Trench MOS logic level FET 3. Ordering information Table 2. Ordering information Type...