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PHD98N03LT
N-channel TrenchMOS logic level FET
Rev. 05 — 1 December 2006
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
1.2 Features
I Low on-state resistance
I Fast switching
1.3 Applications
I Computer motherboard high-frequency DC-to-DC converters
1.4 Quick reference data
I VDS ≤ 25 V I RDSon ≤ 5.9 mΩ
I ID ≤ 75 A I QGD = 15 nC (typ)
2. Pinning information
Table 1. Pinning Pin Description 1 gate (G) 2 drain (D) 3 source (S) mb mounting base; connected to drain (D)
Simplified outline
[1] mb
[1] It is not possible to make a connection to pin 2.
PHD98N03LT Datasheet
