PHD9NQ20T
PHD9NQ20T is N-channel TrenchMOS transistor manufactured by NXP Semiconductors.
N-channel Trench MOS standard level FET
Rev. 03
- 16 December 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS technology. This product is designed and qualified for use in puting, munications, consumer and industrial applications only.
1.2 Features and benefits
- Higher operating power due to low thermal resistance
- Low conduction losses due to low on-state resistance
- Suitable for high frequency applications due to fast switching characteristics
1.3 Applications
- DC-to-DC converters
- General purpose switching
- Motor control circuits
- Off-line switched-mode power supplies
- TV and puter monitor power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VDS drain-source voltage ID drain current Ptot total power dissipation Static characteristics
RDSon drain-source on-state resistance
Dynamic characteristics
QGD gate-drain charge
Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V Tmb = 25 °C
Min Typ Max Unit
- - 200 V
- - 8.7 A
- - 88 W
VGS = 10 V; ID = 4.5 A; Tj = 25...
