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PHD9NQ20T - N-channel TrenchMOS transistor

Datasheet Summary

Description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Features

  • Higher operating power due to low thermal resistance.
  • Low conduction losses due to low on-state resistance.
  • Suitable for high frequency.

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Datasheet preview – PHD9NQ20T

Datasheet Details

Part number PHD9NQ20T
Manufacturer NXP
File Size 153.10 KB
Description N-channel TrenchMOS transistor
Datasheet download datasheet PHD9NQ20T Datasheet
Additional preview pages of the PHD9NQ20T datasheet.

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Full PDF Text Transcription

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PHD9NQ20T N-channel TrenchMOS standard level FET Rev. 03 — 16 December 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits „ Higher operating power due to low thermal resistance „ Low conduction losses due to low on-state resistance „ Suitable for high frequency applications due to fast switching characteristics 1.3 Applications „ DC-to-DC converters „ General purpose switching „ Motor control circuits „ Off-line switched-mode power supplies „ TV and computer monitor power supplies 1.
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