• Part: PHD96NQ03LT
  • Description: N-channel enhancement mode field-effect transistor
  • Category: Transistor
  • Manufacturer: NXP Semiconductors
  • Size: 293.21 KB
Download PHD96NQ03LT Datasheet PDF
NXP Semiconductors
PHD96NQ03LT
PHD96NQ03LT is N-channel enhancement mode field-effect transistor manufactured by NXP Semiconductors.
PHP/PHB/PHD96NQ03LT N-channel enhancement mode field-effect transistor Rev. 03 - 23 October 2001 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using Trench MOS™1 technology. Product availability: PHP96NQ03LT in SOT78 (TO-220AB) PHB96NQ03LT in SOT404 (D2-PAK) PHD96NQ03LT in SOT428 (D-PAK). 2. Features s Low gate charge s Low on-state resistance. 3. Applications s Optimized as a control FET in DC to DC converters. 4. Pinning information Table 1: Pinning - SOT78, SOT404, SOT428 simplified outline and symbol Simplified outline mb mb mb Pin Description 1 2 3 mb gate (g) Symbol d drain (d) source (s) mounting base, connected to drain (d) [1] g s MBB076 2 2 1 MBK106 1 3 MBK116 MBK091 Top view 1 2 3 SOT78 (TO-220AB) [1] SOT404 (D2-PAK) SOT428 (D-PAK) It is not possible to make connection to pin 2 of the SOT404 and SOT428 packages. 1. Trench MOS is a trademark of Koninklijke Philips Electronics N.V. Philips...