NT5DS32M8BF Overview
Key Specifications
Package: BGA
Operating Voltage: 2.5 V
Max Voltage (typical range): 2.7 V
Min Voltage (typical range): 2.3 V
Description
The 256Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM.
Key Features
- Double data rate architecture: two data transfers per clock cycle
- Bidirectional data strobe (DQS) is transmitted and received with data, to be used in capturing data at the receiver
- DQS is edge-aligned with data for reads and is centeraligned with data for writes
