P5506NVG - N- & P-Channel Enhancement Mode Field Effect Transistor

Niko

Datasheet Details

Part number	P5506NVG
Manufacturer	Niko
File Size	555.79 KB
Description	N- & P-Channel Enhancement Mode Field Effect Transistor
Datasheet	P5506NVG Datasheet

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NIKO-SEM www.DataSheet4U.com N- & P-Channel Enhancement Mode Field Effect Transistor P5506NVG SOP-8 Lead-Free PRODUCT SUMMARY V(BR)DSS N-Channel P-Channel 60 -55 RDS(ON) 55m 80m ID 4.5A -3.5A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Junction & Storage Temperature Range Lead Temperature ( /16” from case for 10 sec.) THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1 2 1 1 SYMBOL VDS VGS N-Channel P-Channel 60 ±20 4.5 4 20 2 1.3 -55 to 150 275 -55 ±20 -3.5 -3 -20 UNITS V V TC = 25 °C TC = 70 °C ID IDM A TC = 25 °C TC = 70 °C PD Tj, Tstg TL W °C SYMBOL RθJA TYPICAL MAXIMUM 62.