P5506NVG Datasheet
P5506NVG Datasheet (UNIKC)
UNIKC
P5506NVG N- & P- Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) NChannel PChannel 60 55mΩ @VGS = 10V -60 80mΩ @VGS = 10V ID 4.5A -3.5A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25.
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P5506NVG Datasheet (Niko)
Niko
NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P5506NVG SOP-8 Lead-Free PRODUCT SUMMARY V(BR)DSS N-Channel P-Channel 60 -55 RDS(ON) 55m 80m ID 4.5A -3.5A G : G.
0V, ID = 250µA Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250µA VDS = VGS, ID = 250µA Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250µA VDS = 0V, VGS = ±20V Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 60 -55 1.0 -1.0 1.5 -1.5 2.5 -2.5 ±100 ±100 V MIN TY.