Datasheet Summary
ON Semiconductort
JFET Switching
N- Channel
- Depletion
3 GATE
1 DRAIN
MAXIMUM RATINGS Rating
Drain- Source Voltage Drain- Gate Voltage Gate- Source Voltage Forward Gate Current Total Device Dissipation @ TC = 25°C
Derate above 25°C Junction Temperature Range Storage Temperature Range
Symbol VDS VDG VGS IGF PD
TJ Tstg
Value 25 25 25 10 350 2.8
- 65 to +150
- 65 to +150
2 SOURCE
Unit Vdc Vdc Vdc mAdc mW mW/°C °C °C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic
OFF CHARACTERISTICS
Gate- Source Breakdown Voltage (IG = 10 µAdc, VDS = 0) Gate Reverse Current (VGS = 15 Vdc, VDS = 0) Drain Cutoff Current (VDS = 12 Vdc, VGS =
- 10 V) Drain Cutoff Current...
