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FDC5661N-F085 - N-Channel MOSFET

Key Features

  • RDS(on) = 47 mW at VGS = 10 V, ID = 4.3 A.
  • RDS(on) = 60 mW at VGS = 4.5 V, ID = 4 A.
  • Typ Qg(TOT) = 14.5 nC at VGS = 10 V.
  • Low Miller Charge.
  • UIS Capability.
  • AEC.
  • Q101 Qualified and PPAP Capable.
  • This Device is Pb.
  • Free, Halogen Free/BFR Free and is RoHS Compliant.

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DATA SHEET www.onsemi.com MOSFET – N-Channel, Logic Level, POWERTRENCH) 60 V, 4 A, 60 mW FDC5661N-F085 Features • RDS(on) = 47 mW at VGS = 10 V, ID = 4.3 A • RDS(on) = 60 mW at VGS = 4.5 V, ID = 4 A • Typ Qg(TOT) = 14.5 nC at VGS = 10 V • Low Miller Charge • UIS Capability • AEC−Q101 Qualified and PPAP Capable • This Device is Pb−Free, Halogen Free/BFR Free and is RoHS Compliant Applications • DC–DC Converter • Motor Drives MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Unit Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGS ±20 V Drain Current Continuous (VGS = 10 V) ID 4.3 A Pulsed 20 Single Pulse Avalanche Energy (Note 1) EAS 81 mJ Power Dissipation PD 1.