FDC5661N-F085 Datasheet | onsemi

Features - RDS(on) = 47 m W at VGS = 10 V, ID = 4.3 A - RDS(on) = 60 m W at VGS = 4.5 V, ID = 4 A - Typ Qg(TOT) = 14.5 n C at VGS = 10 V - Low Miller Charge - UIS Capability - AEC- Q101 Qualified and PPAP Capable - This Device is Pb- Free, Halogen Free/BFR Free and is Ro HS pliant Applications - DC- DC Converter - Motor Drives MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Unit Drain to Source Voltage VDSS Gate to Source Voltage ±20 Drain Current Continuous (VGS = 10 V) Pulsed Single Pulse Avalanche Energy (Note 1) 81 m J Power Dissipation Operating and Storage Temperature TJ, TSTG - 55 to °C +150 Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient TO- 263, 1in2 Copper Pad Area Rq JC Rq...