FDC5661N
FDC5661N is N-Channel MOSFET manufactured by onsemi.
Features
- RDS(on) = 47 m W at VGS = 10 V, ID = 4.3 A
- RDS(on) = 60 m W at VGS = 4.5 V, ID = 4 A
- Typ Qg(TOT) = 14.5 n C at VGS = 10 V
- Low Miller Charge
- UIS Capability
- This Device is Pb- Free, Halogen Free/BFR Free and is Ro HS pliant
Applications
- DC/DC Converter
- Motor Drives
MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain to Source Voltage
VDSS
Gate to Source Voltage
±20
Drain Current Continuous (VGS = 10 V)
Pulsed
Single Pulse Avalanche Energy (Note 1)
81 m J
Power Dissipation
Operating and Storage Temperature
TJ, TSTG
- 55 to
°C
+150
Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient TO- 263, 1in2 Copper Pad Area
Rq JC Rq...
