FDC5661N - N-Channel MOSFET

onsemi

Key Features

RDS(on) = 47 mW at VGS = 10 V, ID = 4.3 A.
RDS(on) = 60 mW at VGS = 4.5 V, ID = 4 A.
Typ Qg(TOT) = 14.5 nC at VGS = 10 V.
Low Miller Charge.
UIS Capability.
This Device is Pb.
Free, Halogen Free/BFR Free and is RoHS Compliant.

FDC5661N n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FDC5661N
Manufacturer	onsemi
File Size	407.64 KB
Description	N-Channel MOSFET
Datasheet	FDC5661N Datasheet

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Full PDF Text Transcription (Reference)

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MOSFET – N-Channel, Logic Level, POWERTRENCH) 60 V, 4 A, 60 mW FDC5661N Features • RDS(on) = 47 mW at VGS = 10 V, ID = 4.3 A • RDS(on) = 60 mW at VGS = 4.5 V, ID = 4 A • Typ Qg(TOT) = 14.5 nC at VGS = 10 V • Low Miller Charge • UIS Capability • This Device is Pb−Free, Halogen Free/BFR Free and is RoHS Compliant Applications • DC/DC Converter • Motor Drives MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Unit Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGS ±20 V Drain Current Continuous (VGS = 10 V) ID 4.3 A Pulsed 20 Single Pulse Avalanche Energy (Note 1) EAS 81 mJ Power Dissipation PD 1.