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MCH6661 - N-Channel Power MOSFET

Features

  • ON-resistance Nch : RDS(on)1=145mW (typ. ).
  • 4V drive.
  • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Power Dissipation Junction Temperature VDSS VGSS ID IDP PD Tj PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit Storage Temperature Purposes, Tstg Lead Temperature for Soldering Pu.

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Datasheet Details

Part number MCH6661
Manufacturer ON Semiconductor
File Size 328.84 KB
Description N-Channel Power MOSFET
Datasheet download datasheet MCH6661 Datasheet
Additional preview pages of the MCH6661 datasheet.

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Full PDF Text Transcription

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Ordering number : ENA2280A MCH6661 N-Channel Power MOSFET 30V, 1.8A, 188mΩ, Dual MCPH6 http://onsemi.com Features • ON-resistance Nch : RDS(on)1=145mW (typ.) • 4V drive • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Power Dissipation Junction Temperature VDSS VGSS ID IDP PD Tj PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit Storage Temperature Purposes, Tstg Lead Temperature for Soldering Purposes, 3mm from Case for 10 Seconds TL This product is designed to “ESD immunity < 200V*”, so please take care when handling.
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