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MCH6662 - Power MOSFET

Key Features

  • ON-Resistance Nch : RDS(on)1=120mW (typ).
  • 1.8V Drive.
  • ESD Diode - Protected Gate.
  • Pb-Free, Halogen Free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Power Dissipation Junction Temperature VDSS VGSS ID IDP PD Tj Storage Temperature Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm.

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Datasheet Details

Part number MCH6662
Manufacturer onsemi
File Size 435.21 KB
Description Power MOSFET
Datasheet download datasheet MCH6662 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MCH6662 Power MOSFET 20V, 160mΩ, 2A, Dual N-Channel www.onsemi.com Features • ON-Resistance Nch : RDS(on)1=120mW (typ) • 1.8V Drive • ESD Diode - Protected Gate • Pb-Free, Halogen Free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Power Dissipation Junction Temperature VDSS VGSS ID IDP PD Tj Storage Temperature Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit Value 20 ±10 2.0 8.0 0.8 150 --55 to +150 Unit V V A A W °C °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.