MCH6664 - P-Channel Power MOSFET

onsemi

Key Features

ON-resistance Pch : RDS(on)1=250mW (typ. ).
4V drive.
Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Power Dissipation Junction Temperature VDSS VGSS ID IDP PD Tj PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit Storage Temperature Tstg Lead Temperature for Soldering Purposes, 3m.

MCH6664 p-channel power mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	MCH6664
Manufacturer	onsemi
File Size	342.82 KB
Description	P-Channel Power MOSFET
Datasheet	MCH6664 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
MCH6660	N-Channel and P-Channel Silicon MOSFETs	Sanyo Semicon Device
MCH6663	N-Channel and P-Channel Silicon MOSFETs	Sanyo Semicon Device
MCH6601	Ultrahigh-Speed Switching Applications	Sanyo
MCH6602	Ultrahigh-Speed Switching Applications	Sanyo
MCH6603	Ultrahigh-Speed Switching Applications	Sanyo

Other Datasheets by onsemi

Part Number	Description
MCH6660	Power MOSFET
MCH6661	N-Channel Power MOSFET
MCH6662	Power MOSFET
MCH6663	Power MOSFET
MCH6602	N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Ordering number : ENA2281A MCH6664 P-Channel Power MOSFET –30V, –1.5A, 325mΩ, Dual MCPH6 http://onsemi.com Features • ON-resistance Pch : RDS(on)1=250mW (typ.) • 4V drive • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Power Dissipation Junction Temperature VDSS VGSS ID IDP PD Tj PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit Storage Temperature Tstg Lead Temperature for Soldering Purposes, 3mm from Case for 10 Seconds TL This product is designed to “ESD immunity < 200V*”, so please take care when handling.