NTBG080N120SC1
NTBG080N120SC1 is SiC MOSFET manufactured by onsemi.
Features
- Typ. RDS(on) = 80 m W
- Ultra Low Gate Charge (Typ. QG(tot) = 56 n C)
- Low Effective Output Capacitance (Typ. Coss = 79 p F)
- 100% Avalanche Tested
- TJ = 175°C
- This Device is Halide Free and Ro HS pliant with exemption 7a,
Pb- Free 2LI (on second level interconnection)
Typical Applications
- UPS
- DC-DC Converter
- Boost Inverter
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
Gate- to- Source Voltage
Remended Operation Values of Gate- Source Voltage
VDSS
- 15/+25 V
TC < 175°C VGSop
- 5/+20 V
Continuous Drain Current (Note 1)
Steady TC = 25°C
State
Power Dissipation (Note 1)
179 W
Continuous Drain Current (Note 1)
Steady TC = 100°C
State
Power Dissipation (Note 1)
Pulsed Drain Current (Note...
