NTBG080N120SC1 - SiC MOSFET

onsemi

Features

Typ. RDS(on) = 80 mW.
Ultra Low Gate Charge (Typ. QG(tot) = 56 nC).
Low Effective Output Capacitance (Typ. Coss = 79 pF).
100% Avalanche Tested.
TJ = 175°C.
This Device is Halide Free and RoHS Compliant with exemption 7a, Pb.
Free 2LI (on second level interconnection) Typical.

NTBG080N120SC1 sic mosfet by ON Semiconductor - Datasheet Preview

Datasheet Details

Part number	NTBG080N120SC1
Manufacturer	onsemi
File Size	316.67 KB
Description	SiC MOSFET
Datasheet	NTBG080N120SC1 Datasheet

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 80 mohm, 1200 V, M1, D2PAK-7L NTBG080N120SC1 Features • Typ. RDS(on) = 80 mW • Ultra Low Gate Charge (Typ. QG(tot) = 56 nC) • Low Effective Output Capacitance (Typ.

Published: Aug 10, 2023 |