NTBG080N120SC1 Overview
Silicon Carbide (SiC) MOSFET EliteSiC, 80 mohm, 1200 V, M1, D2PAK-7L NTBG080N120SC1.
NTBG080N120SC1 Key Features
- Typ. RDS(on) = 80 mW
- Ultra Low Gate Charge (Typ. QG(tot) = 56 nC)
- Low Effective Output Capacitance (Typ. Coss = 79 pF)
- 100% Avalanche Tested
- TJ = 175°C
- This Device is Halide Free and RoHS pliant with exemption 7a