• Part: NTBG080N120SC1
  • Manufacturer: onsemi
  • Size: 316.67 KB
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NTBG080N120SC1 Description

Silicon Carbide (SiC) MOSFET EliteSiC, 80 mohm, 1200 V, M1, D2PAK-7L NTBG080N120SC1.

NTBG080N120SC1 Key Features

  • Typ. RDS(on) = 80 mW
  • Ultra Low Gate Charge (Typ. QG(tot) = 56 nC)
  • Low Effective Output Capacitance (Typ. Coss = 79 pF)
  • 100% Avalanche Tested
  • TJ = 175°C
  • This Device is Halide Free and RoHS pliant with exemption 7a