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NTH4L028N170M1 - SiC MOSFET

Datasheet Summary

Features

  • Typ. RDS(on) = 28 mW @ VGS = 20 V.
  • Ultra Low Gate Charge (QG(tot) = 200 nC).
  • High Speed Switching with Low Capacitance (Coss = 200 pF).
  • 100% Avalanche Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant Typical.

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Silicon Carbide (SiC) MOSFET – EliteSiC, 28 mohm, 1700 V, M1, TO-247-4L NTH4L028N170M1 Features • Typ.
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