NTH4L028N170M1 Description
Silicon Carbide (SiC) MOSFET EliteSiC, 28 mohm, 1700 V, M1, TO-247-4L NTH4L028N170M1.
NTH4L028N170M1 Key Features
- Typ. RDS(on) = 28 mW @ VGS = 20 V
- Ultra Low Gate Charge (QG(tot) = 200 nC)
- High Speed Switching with Low Capacitance (Coss = 200 pF)
- 100% Avalanche Tested
- These Devices are Pb-Free and are RoHS pliant