NTH4L028N170M1
NTH4L028N170M1 is SiC MOSFET manufactured by onsemi.
Features
- Typ. RDS(on) = 28 m W @ VGS = 20 V
- Ultra Low Gate Charge (QG(tot) = 200 n C)
- High Speed Switching with Low Capacitance (Coss = 200 p F)
- 100% Avalanche Tested
- These Devices are Pb- Free and are Ro HS pliant
Typical Applications
- UPS
- DC- DC Converter
- Boost Converter
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
VDSS
Gate- to- Source Voltage
- 15/+25 V
Remended Operation Values TC < 175°C VGSop
- 5/+20 V of Gate- to- Source Voltage
Continuous Drain Current (Note 1)
Steady TC = 25°C
State
Power Dissipation (Note 1)
535 W
Continuous Drain Current (Note 1)
Steady TC = 100°C
State
Power Dissipation (Note 1)
267 W
Pulsed Drain Current (Note 2)
TC =...
