Datasheet4U Logo Datasheet4U.com

NTH4L028N170M1 Datasheet SiC MOSFET

Manufacturer: onsemi

Overview: Silicon Carbide (SiC) MOSFET – EliteSiC, 28 mohm, 1700 V, M1,.

📥 Download Datasheet

Key Features

  • Typ. RDS(on) = 28 mW @ VGS = 20 V.
  • Ultra Low Gate Charge (QG(tot) = 200 nC).
  • High Speed Switching with Low Capacitance (Coss = 200 pF).
  • 100% Avalanche Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant Typical.

More Datasheets from onsemi

Part Number Description
NTH4L020N090SC1 SiC MOSFET
NTH4L020N120SC1 SiC MOSFET
NTH4L022N120M3S SiC MOSFET
NTH4L023N065M3S SiC MOSFET
NTH4L025N065SC1 SiC MOSFET
NTH4L027N65S3F N-Channel MOSFET
NTH4L013N120M3S SiC MOSFET
NTH4L014N120M3P SiC MOSFET
NTH4L015N065SC1 SiC MOSFET
NTH4L030N120M3S SiC MOSFET