Download FCPF190N60E Datasheet PDF
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FCPF190N60E Description

SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SUPERFET II MOSFET Easy drive...

FCPF190N60E Key Features

  • 650 V @ TJ = 150°C
  • Typ. RDS(on) = 160 mW
  • Ultra Low Gate Charge (Typ. Qg = 63 nC)
  • Low Effective Output Capacitance (Typ. Coss.eff = 178 pF)
  • 100% Avalanche Tested
  • These Devices are Pb-Free and are RoHS pliant