FDMC86183 Description
This N−Channel MV MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized to minimise on−state resistance and yet maintain superior switching performance with best in class soft body diode.
FDMC86183 Key Features
- Shielded Gate MOSFET Technology
- Max RDS(on) = 12.8 mW at VGS = 10 V, ID = 16 A
- Max RDS(on) = 34.6 mW at VGS = 6 V, ID = 8 A
- 50% Lower Qrr than Other MOSFET Suppliers
- Lowers Switching Noise/EMI
- MSL1 Robust Package Design
- 100% UIL Tested
- Pb-Free, Halide Free and RoHS pliant