FDS4465-F085 Description
This P-Channel 1.8V specified MOSFET is a rugged gate version of ON Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8V 8V). Applications Power management Load switch Battery protection.
FDS4465-F085 Key Features
- 13.5 A, -20 V
- Fast switching speed
- High performance trench technology for extremely low RDS(ON)
- High current and power handling capability
- Qualified to AEC Q101
- RoHS pliant