FDS8958A-F085 Description
These dual N- and P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
FDS8958A-F085 Key Features
- Q1: N-Channel
- Q2: P-Channel
- RDS(on) = 0.052Ω @ VGS = -10V RDS(on) = 0.080Ω @ VGS = -4.5V
- Fast switching speed
- High power and handling capability in a widely used surface mount package
- Qualified to AEC Q101
- RoHS pliant