NTBG014N120M3P Description
Silicon Carbide (SiC) MOSFET EliteSiC, 14 mohm, 1200 V, M3P, D2PAK-7L NTBG014N120M3P.
NTBG014N120M3P Key Features
- Typ. RDS(on) = 14 mW
- Low Switching Losses (Typ. EON 1331 mJ at 74 A, 800 V)
- 100% Avalanche Tested
- Part: NTBG014N120M3P
- Manufacturer: onsemi (official site)
- Size: 325.34 KB
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