NTBG025N065SC1 Description
Silicon Carbide (SiC) MOSFET EliteSiC, 19 mohm, 650 V, M2, D2PAK-7L NTBG025N065SC1.
NTBG025N065SC1 Key Features
- Typ. RDS(on) = 19 mW @ VGS = 18 V
- Ultra Low Gate Charge (QG(tot) = 164 nC)
- Low Output Capacitance (Coss = 278 pF)
- 100% Avalanche Tested
- TJ = 175°C
- RoHS pliant