NTBG060N090SC1 Description
Silicon Carbide (SiC) MOSFET EliteSiC, 60 mohm, 900 V, M2, D2PAK-7L NTBG060N090SC1.
NTBG060N090SC1 Key Features
- Typ. RDS(on) = 60 mW @ VGS = 15 V
- Typ. RDS(on) = 43 mW @ VGS = 18 V
- Ultra Low Gate Charge (QG(tot) = 88 nC)
- High Speed Switching with Low Capacitance (Coss = 115 pF)
- 100% Avalanche Tested
- TJ = 175°C
- This Device is Halide Free and RoHS pliant with exemption 7a