Download NTGD1100L Datasheet PDF
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NTGD1100L Description

MOSFET - Power, P-Channel, Load Switch with Level-Shift, TSOP-6 8 V, +3.3 A NTGD1100L The NTGD1100L integrates a P and N−Channel MOSFET in a single package. This device is particularly suited for portable electronic equipment where low control signals, low battery voltages and high load currents are needed. The P−Channel device is specifically designed as a load switch using ON Semiconductor state−of−the−art trench...

NTGD1100L Key Features

  • Extremely Low RDS(on) Load Switch MOSFET
  • Level Shift MOSFET is ESD Protected
  • Low Profile, Small Footprint Package
  • VIN Range 1.8 to 8.0 V
  • ON/OFF Range 1.5 to 8.0 V
  • ESD Rating of 2000 V
  • These Devices are Pb-Free and are RoHS pliant
  • 55 to °C
  • Date Code orientation may vary depending upon manufacturing location
  • Rev. 12