2SD639
Features q
1.5 R0.9 R0.9
1.0±0.1
Parameter Collector to base voltage Collector to 2SB643 2SB644 2SB643
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Ratings
- 30
- 60
- 25
- 50
- 7
- 1
- 0.5 600 150
- 55 ~ +150
Unit
0.55±0.1
0.45±0.05
1.25±0.05
3 2 1 emitter voltage 2SB644 Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
V V A A m W ˚C ˚C
1:Base 2:Collector 3:Emitter EIAJ:SC- 71 M Type Mold Package
2.5 2.5 s Electrical Characteristics
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance 2SB643 2SB644 2SB643 2SB644
(Ta=25˚C)
Symbol ICBO ICEO VCBO VCEO VEBO h FE1- 1 h FE2 VCE(sat) f T Cob Conditions VCB =
- 20V, IE = 0 VCE =
- 20V, IB = 0 IC =
- 10µA, IE = 0 IC =
- 2m A, IB = 0 IE =
- 10µA, IC = 0 VCE =
- 10V, IC =
- 150m A- 2 VCE =
-...
