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Silicon MOS FETs (Small Signal)
2SK3064
Silicon N-Channel MOS FET
Secondary battery pack (Li ion battery, etc.) For switching
0.425
unit: mm
2.1±0.1 1.25±0.1 0.425
0.65
1
q High-speed switching q S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. q Low-voltage drive (Vth: −1 to 2V) q Low Ron
2.0±0.2
1.3±0.1
0.65
3
2
0.2
0.9±0.1
0 to 0.1
s Absolute Maximum Ratings (Ta = 25°C)
Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDS VGSO ID IDP PD Tch Tstg Ratings 30 ±20 100 200 150 150 −55 to +150 Unit V V mA mA mW °C °C
1: Gate 2: Source 3: Drain
0.7±0.1
0.2±0.
2SK3064 Datasheet
