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2SB967 - Silicon PNP epitaxial planar type power transistor

Download the 2SB967 datasheet PDF. This datasheet also covers the 2SB0967 variant, as both devices belong to the same silicon pnp epitaxial planar type power transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Unit nA µA V V.
  • 18.
  • 7 90 625.
  • 1 120 85 VCE(sat) V MHz pF FE Rank classification P 90 to 135 Q 125 to 205 R 180 to 625 Rank hFE 1 Power Transistors PC.
  • Ta 32.
  • 6 TC=Ta 28.
  • 5 IB=.
  • 40mA.
  • 35mA.
  • 30mA.
  • 25mA.
  • 4.
  • 20mA.
  • 15mA.
  • 10mA.
  • 2.
  • 5mA.
  • 1 4 0 0 20 40 60 80 100 120 140 160 0 0.
  • 2.
  • 4.
  • 6.
  • 8.
  • 10.
  • 12.
  • 1mA 0 0.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SB0967_Panasonic.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2SB967
Manufacturer Panasonic
File Size 62.39 KB
Description Silicon PNP epitaxial planar type power transistor
Datasheet download datasheet 2SB967 Datasheet

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Other Datasheets by Panasonic

Part Number Description
2SB902 PNP Epitaxial Planar Silicon Transistors
2SB0774 Silicon PNP epitaxial planar type Transistors
2SB0967 Silicon PNP epitaxial planar type power transistor
2SB1169 Power Transistors
2SB1169A Power Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Power Transistors 2SB967 Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification 7.3± 0.1 1.8± 0.1 6.5± 0.1 5.3± 0.1 4.35± 0.1 2.3± 0.1 0.5± 0.1 2.5± 0.1 0.8max q q q Possible to solder the radiation fin directly to printed cicuit board Low collector to emitter saturation voltage VCE(sat) Large collector current IC 0.93±0.1 1.0± 0.1 0.1± 0.05 0.5± 0.1 0.75± 0.1 2.3± 0.1 4.6± 0.1 s Absolute Maximum Ratings Parameter Collector to base voltage www.DataSheet4U.com Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation (TC=25°C) Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1 2 3 (Ta=25˚C) Ratings –27 –18 –7 –8 –5 20 150 –55 to +150 Unit V V V A A W 0.