Datasheet Summary
This product plies with the RoHS Directive (EU 2002/95/EC).
Power er MOSFETs
Silicon N-channel enhancement MOSFET
For high speed switching circuits For PDP
- Features
- Medium breakdown voltag: VDSS = 200 V, ID = 30 A
- Low ON resistance, optimum for PDP panel drive
- Package
- Code TO-220C-G1
- Marking Symbol: K3995
- Pin Name 1. Gate 2. Drain 3. Source
Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current
- 1
VDSS VGSS ID IDP
Drain reverse current
Peak drain reverse current
- 1
IDRP
Avalanche energy capability
- 2 Drain power dissipation Junction temperature Storage temperature
EAS PD Tj
TC = 25°C
Ta = 25°C
- 3
Tstg
-...