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MA3X786 - Silicon epitaxial planar type

Key Features

  • Allowing to rectify under (IF(AV) = 100 mA) condition.
  • Optimum for high-frequency rectification because of its short reverse recovery time (trr).
  • Low VF (forward rise voltage), with high rectification efficiency 2.9.
  • 0.05 + 0.2 2.8.
  • 0.3 0.65 ± 0.15 1.5 + 0.2 Unit : mm 0.65 ± 0.15 + 0.25.
  • 0.05 0.95 1.9 ± 0.2 1 3 2 0.95 1.45 0 to 0.1 Parameter Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Average forward c.

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Datasheet Details

Part number MA3X786
Manufacturer Panasonic
File Size 46.37 KB
Description Silicon epitaxial planar type
Datasheet download datasheet MA3X786 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Schottky Barrier Diodes (SBD) MA3X786 Silicon epitaxial planar type For super-high speed switching circuit For small current rectification I Features • Allowing to rectify under (IF(AV) = 100 mA) condition • Optimum for high-frequency rectification because of its short reverse recovery time (trr) • Low VF (forward rise voltage), with high rectification efficiency 2.9 − 0.05 + 0.2 2.8 − 0.3 0.65 ± 0.15 1.5 + 0.2 Unit : mm 0.65 ± 0.15 + 0.25 − 0.05 0.95 1.9 ± 0.2 1 3 2 0.95 1.45 0 to 0.