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Schottky Barrier Diodes (SBD)
MA3X788
Silicon epitaxial planar type
For super-high speed switching circuit For small current rectification I Features
• Allowing to rectify under (IF(AV) = 200 mA) condition • Reverse voltage VR (DC value) = 60 V guaranteed
2.9 − 0.05
+ 0.2
2.8 − 0.3 0.65 ± 0.15 1.5
+ 0.2
Unit : mm
0.65 ± 0.15
+ 0.25 − 0.05
0.95
1.9 ± 0.2
1 3 2
0.95
1.45 0 to 0.1
Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature
VR VRRM IFM IF(AV) IFSM Tj Tstg
60 60 300 200 1 125 −55 to +125
V V mA mA A °C °C
0.1 to 0.3 0.4 ± 0.2
0.8
Parameter
Symbol
Rating
Unit
1.1 − 0.
MA3X788 Datasheet
