MA3X787 - Silicon epitaxial planar type

Panasonic

Key Features

0.95 1 3 2 0.95 1.45 0.4.
0.05 + 0.1 1 MA3X787 IF  V F 103 Schottky Barrier Diodes (SBD) VF  Ta 1.0 104 IR  VR 102 75°C 25°C 0.8 103 Forward current IF (mA) 10 Ta = 125°C.
20°C Forward voltage VF (V) Reverse current IR (µA) Ta = 125°C 0.6 102 75°C 1 0.4 IF = 100 mA 0.2 10 25°C 1 10.
1 10 mA 3 mA 10.
2 0 0.1 0.2 0.3 0.4 0.5 0.6 0.
40 10.
1 0 40 80 120 160 200 0 10 20 30 40 50 60 Forward voltage VF.

MA3X787 silicon epitaxial planar type by Panasonic - Datasheet Preview

Datasheet Details

Part number	MA3X787
Manufacturer	Panasonic
File Size	46.25 KB
Description	Silicon epitaxial planar type
Datasheet	MA3X787 Datasheet

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Full PDF Text Transcription (Reference)

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Schottky Barrier Diodes (SBD) MA3X787 Silicon epitaxial planar type Unit : mm For super-high speed switching circuit For small current rectification 2.9 − 0.05 + 0.2 2.8 − 0.3 0.65 ± 0.15 + 0.2 1.5 − 0.05 + 0.25 0.65 ± 0.15 Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature VR VRRM IFM IF(AV) IFSM Tj Tstg 50 50 300 100 1 125 −55 to +125 V V mA mA A °C °C 1 1 : Anode 2 : NC JEDEC : TO-236 3 : Cathode EIAJ : SC-59 Mini Type Package (3-pin) Marking Symbol: M3U Internal Connection Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) 0 to 0.1 Parameter Symbol Rating Unit 0.1 to 0.3 0.4 ± 0.2 1.