MA3X786D - Silicon epitaxial planar type

Panasonic

Key Features

1 3 2 0.95 1.45 0.4.
0.05 + 0.1 1 MA3X786D IF  V F 103 1.0 Schottky Barrier Diodes (SBD) VF  Ta IR  VR 104 102 75°C 25°C Forward current IF (mA) Reverse current IR (µA) 0.8 103 Ta = 125°C 102 75°C 10 25°C 1 10 Ta = 125°C.
20°C Forward voltage VF (V) 0.6 1 0.4 IF = 100 mA 0.2 10.
1 10 mA 3 mA 10.
2 0 0.1 0.2 0.3 0.4 0.5 0.6 0.
40 10.
1 0 40 80 120 160 200 0 5 10 15 20 25 30 Forward voltage VF (V) Ambient te.

MA3X786D silicon epitaxial planar type by Panasonic - Datasheet Preview

Datasheet Details

Part number	MA3X786D
Manufacturer	Panasonic
File Size	50.64 KB
Description	Silicon epitaxial planar type
Datasheet	MA3X786D Datasheet

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Schottky Barrier Diodes (SBD) MA3X786D Silicon epitaxial planar type For super-high speed switching circuit For small current rectification 2.9 − 0.05 + 0.2 2.8 − 0.3 0.65 ± 0.15 1.5 + 0.2 Unit : mm 0.65 ± 0.15 + 0.25 − 0.05 0.95 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Average forward current Single Double*2 Single Double*2 IFSM Tj Tstg IF(AV) Symbol VR VRRM IFM Rating 30 30 300 200 100 70 1 125 −55 to +125 A mA Unit V V mA 1.1 − 0.1 1 : Cathode 1 2 : Cathode 2 JEDEC : TO-236 3 : Anode 1, 2 EIAJ : SC-59 Mini Type Package(3-pin) Marking Symbol: M3Y Internal Connection 1 Non-repetitive peak forward surge current*1 Junction temperature Storage temperature °C °C 2 0 to 0.1 0.1 to 0.3 0.4 ± 0.2 0.